Optical: systems and elements – Optical modulator – Light wave temporal modulation
Patent
1994-03-23
1996-12-17
Nelms, David C.
Optical: systems and elements
Optical modulator
Light wave temporal modulation
359250, 257 13, 257 14, H01L 2714
Patent
active
055859577
ABSTRACT:
An optical functional device includes a semiconductor substrate, an optical functional layer provided on said semiconductor substrate and selected from the group consisting of a light emitting layer, a light absorbing layer, and an optical waveguide layer. The optical functional layer has a multi-quantum well layer. Preferably, the semiconductor substrate is a nonplanar semiconductor substrate having a ridge and two grooves adjacent said ridge, said ridge having a ridge width of from 1 to 10 .mu.m, a ridge height of from 1 .mu.m to 5 .mu.m, and a gap distance of from 1 .mu.m to 10 .mu.m. Such an optical functional device can be fabricated by growing, on a nonplanar semiconductor substrate having a specified dimension of the ridge, a strained multi-quantum well layer by metalorganic vapor phase epitaxy. Integrated optical device or circuit preferably includes an optical functional device on the nonplanar semiconductor substrate of a specified range of ridge shape factors. An integrated optical device can be fabricated by combination of a plurality of optical functional devices having slightly different compositions and including a part of a strained multi-quantum well layer monolithically grown on a nonplanar semiconductor substrate.
REFERENCES:
patent: 4647339 (1987-03-01), Houghton
patent: 5001521 (1991-03-01), Okuda et al.
patent: 5274246 (1993-12-01), Hopkins et al.
patent: 5345092 (1994-09-01), Kurihara
Excerpt from Extended Abstracts, The Autumn Meeting, 1990, of "The Japan Society of Applied Physics," Report No. 26a-SQ-20, with translation.
Excerpt from Extended Abstracts, The Autumn Meeting, 1990, of "The Japan Society of Applied Physics," Report No. 28a-SA-20, with translaton.
Excerpt from Extended Abstracts, The Autumn Sectional, of 1990, Joint Symposium on "Structural Stability, State of Electron, dynamics-For Development of New Techniques," The Japan Society of Physics, with translation.
Excerpt from Extended Abstracts, The Autumn Meeting, 1990, "Applied Physics," Report No. 26a-SQ-14, with translation.
Excerpt from Extended Abstracts, The 38th Spring Meeting, "The Japan Society of Applied Physics and Related Societies," Report No. 30p-N-14, with translation.
Excerpt from Extended Abstracts, The 38th Spring Meeting, "The Japan Society of Applied Physics and Related Societies," Report No. 30p-N-17, with translation.
Excerpt from Extended Abstracts, The 52nd Autumn Meeting, 1991, "The Japan Society of Applied Physics," Report No. 10p-F-5, with translation.
Excerpt from Text of Training Course on "New Surface Material and Epitaxy," held on Jul. 26, 1991 by The Japan Society of Physics, No. 14, GaAs Surface and Adsorption Layer, with translaton.
Excerpt of "The Institute of Electronics, Information and Communication Engineers," No. OQE 91-93 (1991), with translation.
Excerpt from Extended Abstracts, The Spring Meeting, 1992, "The Japan Society of Applied Physics," Report No. 30a-Q-2, with translation.
Study Report of Sectional Meeting on Applied Electronic Physical Properties, "The Japan Society of Applied Physics," Oct. 9, 1992, p. 12.
Study Report of Sectional Meeting on Applied Electronic Physical Properties, "The Japan Society of Applied Physics," Oct. 9, 1992, p. 5.
Extended Abstracts (The 40th Spring Meeting, 1993), "The Japan Society of Applied Physics and Related Societies," Mar. 29, 1993 (30a-ZR-10).
Extended Abstracts (The 40th Spring Meeting, 1993), "The Japan Society of Applied Physics and Related Societies," Mar. 29, 1993 (29p-C-16).
Yasuo Nannichi et al., "A Model to Explain the Effective Passivation of the GaAs Surface by (NH.sub.4).sub.2 S.sub.x Treatment,"Japanese Journal of Applied Physics, vol. 27, No. 12, Dec., 1988, pp. L2367-L2369.
Takashi Sugino et al., "Defect Passivation of GaAs Surface By Phosphidization," Elsevier Science Publishers, B.V. (1990) pp. 849-853.
Jia-Fa Fan et al., "Marked Reduction of the Surface/Interface States of GaAs by (NH.sub.4 ).sub.2 S.sub.x Treatment," Japanese Journal of Applied Physics, vol. 28, No. 12, Dec., 1989, pp. L2255-L2257.
C. J. Sindt et al., "Sulfur passivation of GaAs surfaces: A model for reduced surface recombination without band flattening," Appl. Phys. Lett. 55(16), Oct., 1989, pp. 1653-1655.
J. I. Pankove et al., "Passivation of GaAs Surfaces," Journal of Electronic Materials, vol. 12, No. 2, (1983), pp. 359-370.
Hideki Hasegawa et al., "Unified disorder induced gap state model for insulator-semiconductor and metal-semiconductor interference," J. Vac. Sci. Technol. B4(4), Jul./Aug. 1986 pp. 1130-1138.
Hiromitsu Asai et al., "Energy band-gap shift with elastic strain in Ga.sub.x In.sub.1-x P epitaxial layers on (001) GaAs substrates," J. Appl. Phys. 54(4), Apr. 1983, pp. 2052-2056.
D. J. Olego et al., "Passivation of the GaAs surface by an amorphous phosphorus overlayer," Appl. Phys. Lett45(10), Nov. 15, 1984, pp. 1127-1129.
Takahisa Ohno et al., "First-principles study of sulfur passivation of GaAs (001) surfaces," The American Physical Society, 1990, pp. 11194-11197.
Takahisa Ohno, "Sulfur passivation of GaAs surfaces," The American Physical Society, 1991, pp. 6306-6311.
Yoshinori Wada et al., "A New Surface Passivation of GaAs Using CVD-Atomic Layer Passivation," The Japan Society of Applied Physics, Aug. 1991, pp. 683-685.
Takahisa Ohno, "Passivation of GaAs (001) surfaces by chalcoqen atoms (S, Se and Te)," Surface Science 225, (1991), pp. 229-236.
Takahisa Ohno et al., "AB Initio Calculations on Effect of Ga-S Bonds on Passivation of GaAs Surface-A Proposal for New Surface Treatment," Materials Science Forum, vol. 83-87 (1992), pp. 1403-1408.
Hirohiko Sugahara et al., "Photoemission Analysis of H.sub.2 S-Treated GaAs Surfaces," PF Activity Report, 1991.
R. Zengerle et al., "Low-Lowss Fibre-Chip Coupling By Buried Laterally Tapered InP/InGaAsP Waveguide Structure," Electronic Letters, Mar. 26, 1992, vol. 28, No. 7, pp. 631-632.
P. Viktorovitch et al., "Improved electronic properties of GaAs surfaces stabilized with phosphorus," Appl. Phys. Lett. 58(21), May 27, 1991, pp. 2387-2389.
M. Gendry et al., "Improved Electronic Properties of As-Based III-V Compound Semiconductor Surface Stabilized with Phosphorus," IEEE Catalog No. 91CH2950-4, (Apr. 1991), pp. 567-570.
The Institute of Electronics, Information and Communication Engineers, transactions, C-1, vol. J73-J-, No. 5, pp. 360-367, May 1990, with partial translation.
Kasaya Kazuo
Kondou Yasuhiro
Mitomi Osamu
Naganuma Mitsuru
Nakano Jun-ichi
Le Vu
Nelms David C.
Nippon Telegraph and Telephone Corporation
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