Method for producing trench structures in silicon substrates for

Details Method for producing trench structures in silicon substrates for Method for producing trench structures in silicon substrates for

1990-12-31

1992-06-02

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156647, 156662, 437 52, 437 67, H01L 2176

Patent

active

051183838

ABSTRACT:
A method is provided for producing trench structures having vertical, smooth side walls and straight, flat trench floors in silicon substrates. The reactive ion etching is implemented in a triode single-wafer plate reactor upon use of an etching mask preferably composed of SiO.sub.2, and with an etching gas atmosphere exclusively composed of chlorine, being implemented at a low-pressure. Compared to known ion etching processes, the method provides acceptable etching rates with a carbon-free, simple etching chemistry. The method is particularly useful for producing DRAMs with cell concepts of more than 4 Mbits.

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Sato, M., et al. Etched Shape Control of Single-Crystal Silicon in Reactive Ion Etching Using Cholorine, Solid-State Science and Technology, Nov. 1987, pp. 2856-2862.

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