Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1991-02-26
1993-01-19
Weisstuch, Aaron
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429808, 20429819, 20429825, C23C 1435
Patent
active
051804760
ABSTRACT:
A method of producing by sputtering an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film according to the present invention uses the addition of a donor element, if needed. The sputtering is carried out by maintaining an intensity of a magnetic field on a surface of a target at 600 Oe or greater as well as by charging the target with a DC electric field superimposed by an RF electric field. An apparatus for producing an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O base transparent conductive film uses the addition of a donor element, if needed. The apparatus has a vacuum chamber adapted to support therein a substrate and a target in an opposed relationship for forming by sputtering the transparent conductive film on the substrate by plasma discharge generated therebetween. The apparatus has a device for forming a magnetic field having a predetermined intensity of 600 Oe or greater on a surface of the target, a DC power supply for charging the target with a DC electric field, and an RF power supply for charging the target with an RF electric field superimposed on the DC electric field.
REFERENCES:
patent: 4849081 (1989-07-01), Ross
patent: 5026471 (1991-06-01), Latz et al.
Higuchi Yasushi
Ishibashi Satoru
Komatsu Takashi
Murata Yuzo
Nakamura Kyuzo
Nihon Shinku Gijutsu Kabushiki Kaisha
Weisstuch Aaron
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