Method for producing titanium silicide

Details Method for producing titanium silicide Method for producing titanium silicide

1997-10-15

2000-08-15

Booth, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438656, 438683, H01L 214763

Patent

active

06103620&

ABSTRACT:
A method for producing a titanium silicide. Titanium is deposited in a chamber in a reactive sputtering manner while flowing a mixture of argon gas and SiH.sub.4 or Si.sub.2 H.sub.6 into the chamber.

REFERENCES:
patent: 4218291 (1980-08-01), Fukuyama et al.
patent: 5278100 (1994-01-01), Doan et al.

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