Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1994-06-03
1997-09-09
Niebling, John
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438685, 427575, H01L 2128
Patent
active
056656408
ABSTRACT:
A method and apparatus for depositing a film on a substrate by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures comprises placing a substrate within a reaction chamber and exciting a first gas upstream of the substrate to generate activated radicals of the first gas. The substrate is rotated within the deposition chamber to create a pumping action which draws the gas mixture of first gas radicals to the substrate surface. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. The pumping action draws the gas mixture down to the substrate surface in a laminar flow to reduce recirculation and radical recombination such that a sufficient amount of radicals are available at the substrate surface to take part in the surface reaction. Another method utilizes a gas-dispersing showerhead that is biased with RF energy to form an electrode which generates activated radicals and ions in a concentrated plasma close to the substrate surface. The activated plasma gas radicals and ions utilized in the invention contribute energy to the surface reaction such that the film may be deposited at a substantially lower deposition temperature that is necessary for traditional thermal CVD techniques. Furthermore, the activation of these species reduces the temperature needed to complete the surface reaction. The method is particularly useful in depositing titanium-containing films at low temperatures.
REFERENCES:
patent: 4138306 (1979-02-01), Niwa
patent: 4151325 (1979-04-01), Welch
patent: 4178877 (1979-12-01), Kudo
patent: 4282267 (1981-08-01), Kuyel
patent: 4352834 (1982-10-01), Taketoshi et al.
patent: 4365587 (1982-12-01), Hirose et al.
patent: 4366208 (1982-12-01), Akai et al.
patent: 4410758 (1983-10-01), Grolitzer
patent: 4504518 (1985-03-01), Ovshinsky et al.
patent: 4532199 (1985-07-01), Ueno et al.
patent: 4535000 (1985-08-01), Gordon
patent: 4557943 (1985-12-01), Rosler et al.
patent: 4657774 (1987-04-01), Satou et al.
patent: 4678679 (1987-07-01), Ovshinsky
patent: 4689093 (1987-08-01), Ishihara et al.
patent: 4702934 (1987-10-01), Ishihara et al.
patent: 4716048 (1987-12-01), Ishihara et al.
patent: 4717584 (1988-01-01), Aoki et al.
patent: 4717585 (1988-01-01), Ishihara et al.
patent: 4717586 (1988-01-01), Ishihara et al.
patent: 4718976 (1988-01-01), Fujimura
patent: 4726963 (1988-02-01), Ishihara et al.
patent: 4728528 (1988-03-01), Ishihara et al.
patent: 4759947 (1988-07-01), Ishihara et al.
patent: 4772486 (1988-09-01), Ishihara et al.
patent: 4774195 (1988-09-01), Beneking
patent: 4778692 (1988-10-01), Ishihara et al.
patent: 4784874 (1988-11-01), Ishihara et al.
patent: 4792378 (1988-12-01), Rose et al.
patent: 4798165 (1989-01-01), de Boer et al.
patent: 4801468 (1989-01-01), Ishihara et al.
patent: 4803093 (1989-02-01), Ishihara et al.
patent: 4818560 (1989-04-01), Ishihara et al.
patent: 4818563 (1989-04-01), Ishihara et al.
patent: 4835005 (1989-05-01), Hirooka et al.
patent: 4844950 (1989-07-01), Saitoh et al.
patent: 4851302 (1989-07-01), Nakagawa et al.
patent: 4853251 (1989-08-01), Ishihara et al.
patent: 4869923 (1989-09-01), Yamazaki
patent: 4869924 (1989-09-01), Ito
patent: 4870030 (1989-09-01), Markunas et al.
patent: 4876983 (1989-10-01), Fukuda et al.
patent: 4885067 (1989-12-01), Doty
patent: 4886683 (1989-12-01), Hoke et al.
patent: 4888062 (1989-12-01), Nakagawa et al.
patent: 4888088 (1989-12-01), Slomowitz
patent: 4897709 (1990-01-01), Yokoyama et al.
patent: 4898118 (1990-02-01), Murakami et al.
patent: 4900694 (1990-02-01), Nakagawa
patent: 4908329 (1990-03-01), Kanai et al.
patent: 4908330 (1990-03-01), Arai et al.
patent: 4913929 (1990-04-01), Moslehi et al.
patent: 4914052 (1990-04-01), Kanai
patent: 4926229 (1990-05-01), Nakagawa et al.
patent: 4927786 (1990-05-01), Nishida
patent: 4937094 (1990-06-01), Doehler et al.
patent: 4946514 (1990-08-01), Nakagawa et al.
patent: 4951602 (1990-08-01), Kanai
patent: 4954397 (1990-09-01), Amada et al.
patent: 4957772 (1990-09-01), Saitoh et al.
patent: 4959106 (1990-09-01), Nakagawa et al.
patent: 4971832 (1990-11-01), Arai et al.
patent: 4977106 (1990-12-01), Smith
patent: 4987856 (1991-01-01), Hey et al.
patent: 4992305 (1991-02-01), Erbil
patent: 4992839 (1991-02-01), Shirai
patent: 4998503 (1991-03-01), Murakami et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5002617 (1991-03-01), Kanai et al.
patent: 5002618 (1991-03-01), Kanai et al.
patent: 5002793 (1991-03-01), Arai
patent: 5002796 (1991-03-01), Nishida
patent: 5006180 (1991-04-01), Kanai et al.
patent: 5007971 (1991-04-01), Kanai et al.
patent: 5008726 (1991-04-01), Nakagawa et al.
patent: 5010842 (1991-04-01), Oda et al.
patent: 5018479 (1991-05-01), Markunas et al.
patent: 5024706 (1991-06-01), Kanai et al.
patent: 5028488 (1991-07-01), Nakagawa et al.
patent: 5030475 (1991-07-01), Ackermann et al.
patent: 5037666 (1991-08-01), Mori
patent: 5039354 (1991-08-01), Nakagawa et al.
patent: 5052339 (1991-10-01), Vakerlis et al.
patent: 5061511 (1991-10-01), Saitoh et al.
patent: 5073232 (1991-12-01), Ohmi et al.
patent: 5085885 (1992-02-01), Foley et al.
patent: 5087542 (1992-02-01), Yamazaki et al.
patent: 5093149 (1992-03-01), Doehler et al.
patent: 5093150 (1992-03-01), Someno et al.
patent: 5100495 (1992-03-01), Ohmi et al.
patent: 5122431 (1992-06-01), Kodama et al.
patent: 5126169 (1992-06-01), Ishihara et al.
patent: 5130170 (1992-07-01), Kanai et al.
patent: 5139825 (1992-08-01), Gordon et al.
patent: 5151296 (1992-09-01), Tokunaga
patent: 5154135 (1992-10-01), Ishihara
patent: 5173327 (1992-12-01), Sandhu et al.
patent: 5175017 (1992-12-01), Kobayashi et al.
patent: 5178904 (1993-01-01), Ishihara et al.
patent: 5178905 (1993-01-01), Kanai et al.
patent: 5180435 (1993-01-01), Markunas et al.
patent: 5213997 (1993-05-01), Ishihara et al.
patent: 5220181 (1993-06-01), Kanai et al.
patent: 5246881 (1993-09-01), Sandhu et al.
patent: 5260236 (1993-11-01), Petro et al.
patent: 5268034 (1993-12-01), Vukelic
patent: 5296404 (1994-03-01), Akahori et al.
patent: 5342652 (1994-08-01), Foster et al.
patent: 5356476 (1994-10-01), Foster et al.
patent: 5370739 (1994-12-01), Foster et al.
patent: 5378501 (1995-01-01), Foster et al.
patent: 5416045 (1995-05-01), Kauffman et al.
patent: 5433787 (1995-07-01), Suzuki et al.
patent: 5434110 (1995-07-01), Foster et al.
Hilton et al, "Comp. Morph&Mech Prop of Plasma-Assisted Chemically Vapor-Dep TiN Films on M2 Tool Steel" Metallurgical and Protective Coatings, Thin Solid Films 139(1986)247-260.
Suzuki et al., "Planarized Deposition of High-Quality Silicon Dioxide Film by Photoassisted Plasma CVD at 300 C Using Tetraethyl Orthosilicate" 362 Jap Jrnl of Applied Physics 29(1990)Dec., #12, Tokyo, JP.
Foster Robert F.
Hillman Joseph T.
LeBlanc Rene E.
Bilodeau Thomas G.
Materials Research Corp.
Niebling John
Sony Corporation
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