Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1995-03-02
1997-03-18
Chea, Thorl
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
216 66, 216 79, 216 81, 1566431, 250306, 250307, 250423F, H01J 3700, B44C 122
Patent
active
056119429
ABSTRACT:
The present invention is a method for forming a three point atomic force microscope tip. The method includes forming a substantially longitudinally extending solid tip having a peripheral surface and a forward end surface. Three masks are formed by deposition of carbon upon the solid tip, with a first and second of the masks formed along the peripheral surface, and a third of the masks formed on the forward end surface. The mask covered tip is then etched for a predetermined period of time to remove material from both the tip and the mask. After the predetermined period of time has elapsed, the masks are completely removed, and the removal of material from the tip results in the formation of three spikes which are pointed to the location from which the masks were removed.
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patent: 5282924 (1994-02-01), Bayer et al.
"Two-dimensional Atomic Force Microprobe Trench Metrology System", D. Nyyssonen et al., J. Vac. Sci. Technol., B 9(6), Nov./Dec. 1991, pp. 3612-3616.
Mitsui Tadashi
Okumura Katsuya
Chea Thorl
Kabushiki Kaisha Toshiba
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