Method for producing tiered gate structure devices

Details Method for producing tiered gate structure devices Method for producing tiered gate structure devices

2005-06-11

2008-10-21

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Forming schottky junction

Compound semiconductor

C438S579000, C257SE21205

Reexamination Certificate

active

07439166

ABSTRACT:
In one implementation, a method for fabricating a tiered structure is provided, which includes forming a source and a drain on a substrate with a gate formed therebetween. Formation of the gate includes depositing a gate foot using a gate foot mask having an opening through it to define the gate foot over the substrate. After forming the gate foot, the gate foot mask is stripped. A gate head mask is formed over the gate foot with the gate head mask exposing a top portion of the gate foot. A gate head is formed on the top portion of the gate foot using the gate head mask. A lift-off process is performed, removing the gate head mask.

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