Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1997-04-30
2000-04-11
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419226, 20419215, 20429813, 20429826, 438 95, 427 76, C23C 1434
Patent
active
06048442&
ABSTRACT:
A thin-film light absorbing layer which is regulated so as to have any desired gallium concentration and which is capable of attaining a high open-circuit voltage is formed by a simple method at a temperature lower than the softening point of the soda-lime float glass. A light absorbing layer is formed by forming a back electrode on a soda-lime float glass substrate, forming on the back electrode layer a stacked precursor film including a copper-gallium alloy layer and an indium layer by sputtering, and then heating the precursor film in an atmosphere of selenium and/or sulfur.
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Neelkanth, G. D. and Lynn, K. W.: "Gallium Content Enhancement in CuInp.sub.1-x Ga.sub.x Se.sub.2 Thin Films Prepared by Two-Selenizations Process Using Se Vapor", Twenty Fifth IEEE Photovoltaic Specialists Conference Proceedings, May 13-17, 1996, pp. 897-900, XP002092407.
Katsumi Kushiya et al., 25th IEEE Photovoltaics Specialists Conference, "The Role of Cu(InGa)(SeS).sub.2 Surface Layer On A Graded Band-Gap Cu(InGa)Se.sub.2 Thin-Film Solar Cell Prepared By Two-Stage Method".
Kase Takahisa
Kushiya Katsumi
Tachiyuki Muneyori
Mercado Julian A.
Nguyen Nam
Showa Shell Sekiyu K.K.
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