Method for producing substrate

Details Method for producing substrate Method for producing substrate

2011-01-11

2011-01-11

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S667000, C438S695000, C438S702000, C257SE21597, C257SE23011

Reexamination Certificate

active

07867894

ABSTRACT:
A metallic film43that becomes the matrix of pad32is formed on semiconductor substrate41. Next, through hole31is formed in the semiconductor substrate41facing the metallic film43at the portion corresponding to an area where the pad32is formed. Thereafter, penetration electrode17is formed in through hole31. Next, penetration portion49to expose the side of the penetration electrode17is formed in the semiconductor substrate41. Next, an insulative member16is formed to be filled up in at least the penetration portion49. After that, the pad32is formed by patterning the metallic film43.

REFERENCES:
patent: 6790775 (2004-09-01), Fartash
patent: 7022609 (2006-04-01), Yamamoto et al.
patent: 2006/0108666 (2006-05-01), Koizumi
patent: 2007/0246819 (2007-10-01), Hembree et al.
patent: 2008/0042247 (2008-02-01), Wood et al.
patent: 2009/0047781 (2009-02-01), Pratt et al.
patent: 2004-095849 (2004-03-01), None

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