Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2004-03-30
2009-11-24
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
Reexamination Certificate
active
07622318
ABSTRACT:
When a semiconductor light emitting device or a semiconductor device is produced using a nitride type III-V group compound semiconductor substrate on which a plurality of second regions made of a crystal having a second average dislocation density are regularly arranged in a first region made of a crystal having a first average dislocation density so as to produce the structured substrate, the second average dislocation density being greater than the first average dislocation density, a light emitting region of the semiconductor light emitting device or an active region of the semiconductor device is formed in such a manner that it does not pass through any one of the second regions.
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Japanese Office Action, issued on Mar. 3, 2009, 4 pages.
Kobayashi Toshimasa
Motoki Kensaku
Mulpuri Savitri
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
Sumitomo Electric Industries Ltd.
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