Method for producing SOI wafer

Details Method for producing SOI wafer Method for producing SOI wafer

2011-03-22

2011-03-22

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S458000, C438S459000, C257SE21567, C257SE21568, C257SE21569

Reexamination Certificate

active

07910455

ABSTRACT:
The present invention relates to a method for producing an SOI wafer, having at least a step of a bonding heat treatment for increasing bonding strength by heat-treating a bonded wafer obtained by bonding a base wafer and a bond wafer, in which argon is ion-implanted from a surface of either the base wafer or the bond wafer at a dosage of 1×1015atoms/cm2or more at least before the bonding step, the surface ion-implanted with argon is used as a bonding surface in the bonding step, and an increase rate of temperature to a treatment temperature of the bonding heat treatment is 5° C./minute or higher. Thus the present invention provides a method for producing an SOI wafer facilitating the efficient production of an SOI wafer having in the neighborhood of a buried insulator layer thereof a polycrystalline silicon layer uniform in thickness introduced and having high gettering ability toward metal contaminations in the SOI layer by a simple and low-cost method.

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Aug. 26, 2010 European Search Report issued in EP 07 74 1675.

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