Method for producing SOI substrate

Details Method for producing SOI substrate Method for producing SOI substrate

2009-03-04

2010-11-23

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S799000, C257SE21320, C257SE21119, C257SE21212

Reexamination Certificate

active

07838388

ABSTRACT:
Provided is a method for producing an SOI substrate having a thick-film SOI layer, in which an ion-implanted layer is formed by implanting at least one kind of ion of hydrogen ion and a rare gas ion into a surface of a bond wafer, an SOI substrate having an SOI layer is produced by, after the ion-implanted surface of the bond wafer and a surface of a base wafer are bonded together via an oxide film, delaminating the bond wafer along the ion-implanted layer, heat treatment is performed on the SOI substrate having the SOI layer in a reducing atmosphere containing hydrogen or an atmosphere containing hydrogen chloride gas, and, after the surface of the SOI layer is polished by CMP, a silicon epitaxial layer is grown on the SOI layer of the SOI substrate.

REFERENCES:
patent: 6613676 (2003-09-01), Yonehara et al.
patent: 2001/0046746 (2001-11-01), Yokokawa et al.
patent: 2003/0159644 (2003-08-01), Yonehara et al.
patent: 2003/0181001 (2003-09-01), Aga et al.
patent: A 11-288858 (1999-10-01), None
patent: A 2000-30995 (2000-01-01), None
patent: A-2001-85649 (2001-03-01), None
patent: A 2003-163193 (2003-06-01), None
patent: A 2003-347176 (2003-12-01), None
patent: WO 03/009386 (2003-01-01), None
Office Action in Japanese Application No. 2008-102586 issued Sep. 7, 2010 (with partial English translation).

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