Method for producing smooth indium-tin-oxide layers on...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S104000, C257S040000

Reexamination Certificate

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07041588

ABSTRACT:
In a method for producing ITO layers on substrates, especially for the production of organic light-emitting diodes, part of the ITO layer thickness is applied first by sputter-deposition, at a controlled temperature profile, in such manner that the formation of crystallization nuclei is prevented; subsequently, the partially coated substrate is heated to a temperature above the recrystallization temperature of the ITO layer, and then the rest of the ITO layer is sputter-deposited.

REFERENCES:
patent: 02189816 (1990-07-01), None
patent: 07078526 (1995-03-01), None

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