Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-09
2006-05-09
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S104000, C257S040000
Reexamination Certificate
active
07041588
ABSTRACT:
In a method for producing ITO layers on substrates, especially for the production of organic light-emitting diodes, part of the ITO layer thickness is applied first by sputter-deposition, at a controlled temperature profile, in such manner that the formation of crystallization nuclei is prevented; subsequently, the partially coated substrate is heated to a temperature above the recrystallization temperature of the ITO layer, and then the rest of the ITO layer is sputter-deposited.
REFERENCES:
patent: 02189816 (1990-07-01), None
patent: 07078526 (1995-03-01), None
Applied Films GmbH & Co. KG
Coleman W. David
Tobergte Nicholas J.
Van Dyke Gardner, Linn & Burkhart, LLP
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