Method for producing single crystals

Details Method for producing single crystals Method for producing single crystals

1974-01-11

1976-04-20

Tayman, Jr., James H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

23301SP, 23273SP, 423263, B01J 1718

Patent

active

039517292

ABSTRACT:
In growing single crystals of gadolinium gallium garnet, dysprosium gallium garnet and the like according to the Czochralski method, when the velocity of rotation of the crystal during growth of a slender part is made lower than the velocity of rotation of the crystal during growth of a body portion, single crystals free of defects such as dislocation or facet can be obtained.

REFERENCES:
patent: 3723599 (1973-03-01), Brandle, Jr. et al.
patent: 3761692 (1973-09-01), Cope
goss et al.; Semiconductors Part 1, I, Solid state Physics in Electronics and Telecommunication, pp. 30-31, 1960.

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