Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1984-02-21
1985-11-26
Lacey, David L.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156DIG64, 156DIG73, 156DIG80, C30B 2506
Patent
active
045553009
ABSTRACT:
A monocrystalline layer of silicon is formed on an insulating substrate according to the present invention by use of a semi-insulating layer between the insulator and silicon film. This semi-insulating layer is composed of a mixture of silicon crystallites embedded in a silicon dioxide glass, for example. Such a technique results in a structure which is substantially free of cracking resulting from differences in thermal expansion coefficients between the insulating substrate and the monocrystalline silicon layer.
REFERENCES:
patent: 3585088 (1971-06-01), Schwuttke et al.
patent: 4087571 (1978-05-01), Kamins et al.
Protection of Porous Silicon from Oxidation and Impurities, Dockerty et al., IBM Tech. Disc. Bull., V. 17, No. 6, Nov. 1974.
Hartstein et al., Observation of Amorphous Silicon Regions in Silicon-Rich Silicondioxide Films, Appl. Phys. Lett. 36 (10), May 1980, pp. 836, 837.
D. Dong et al., Preparation and Some Properties of Chemically Vapor-Deposited Si-Rich SiO.sub.2 and Si.sub.3 N.sub.4 Films, Journal of Electrochemical Society, Solid-State Science and Technology, vol. 125, No. 5, May 1978, pp. 819-823.
Maxwell, Jr., et al., Journal of Electrochemical Society, Solid-State Science and Technology, vol. 128, No. 3, Mar. 1981, pp. 576-580.
Arnold Emil
Baumgart Helmut
Rossi Barbara A.
Lacey David L.
Miller Paul R.
North American Philips Corporation
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