Method for producing silicon single crystal from polycrystalline

Details Method for producing silicon single crystal from polycrystalline Method for producing silicon single crystal from polycrystalline

1991-04-01

1993-05-18

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566207, 15662071, 15662073, 15662074, 156DIG64, 423DIG16, C30B 2906

Patent

active

052118029

ABSTRACT:
A method of producing single-crystal silicon is disclosed. Polycrystalline silicon rod is formed from polycrystalline silicon granules, lumps or a mixture thereof by continuous casting through electromagnetic induction. Then, silicon single cyrstal is grown from the polycrystalline silicon rod by the FZ method.

REFERENCES:
patent: 2743199 (1956-04-01), Hull et al.
patent: 3663180 (1972-05-01), Brissot et al.
patent: 4325777 (1982-04-01), Yarwood et al.
patent: 5006317 (1991-04-01), Sanjurjo

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