Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2005-10-25
2010-11-30
Neckel, Alexa D (Department: 1795)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192150, C204S192220, C204S192260
Reexamination Certificate
active
07842168
ABSTRACT:
The invention provides a method for producing a silicon oxide film, whereby a film having uniform optical constants such as refractive index, absorption coefficient, etc. can be formed continuously at a high deposition rate.A method for producing a silicon oxide film, which comprises depositing a silicon oxide film on a substrate by carrying out AC sputtering by using a sputtering target comprising silicon carbide and silicon with a ratio in number of atoms of C to Si being from 0.5 to 0.95, in an atmosphere containing an oxidizing gas, with an alternating current having a frequency of from 1 to 1,000 kHz.
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Ikeda Toru
Kamiyama Toshihisa
Katayama Yoshihito
Mashimo Takahiro
Shidoji Eiji
Asahi Glass Company Limited
Band Michael
Neckel Alexa D
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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