Method for producing silicon oxide film

Details Method for producing silicon oxide film Method for producing silicon oxide film

2005-02-17

2009-02-10

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S778000, C438S790000

Reexamination Certificate

active

07488693

ABSTRACT:
[Problems] It is to provide a method for producing a silicon oxide film having better quality than a TEOS at low temperature. And it is to provide a method for manufacturing a semiconductor device wherein an insulating film composed of a silicon oxide is formed.[Means for solving problems] A film composed of a silicon oxide is produced by CVD method where a silane compound represented by the following general formula is reacted. An insulating film is deposited by CVD method where a silane compound represented by the following general formula is reacted.in-line-formulae description="In-line Formulae" end="lead"?HnSi2(OR)6−nin-line-formulae description="In-line Formulae" end="tail"?(In the above formula, R is an alkyl group of carbon number from 1 to 5, and n is an integer from 0 to 2.)

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