Method for producing Si 1-y Ge y based zones with different...

Details Method for producing Si 1-y Ge y based zones with different... Method for producing Si 1-y Ge y based zones with different...

2011-07-05

2011-07-05

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S770000, C438S478000, C438S455000, C438S222000, C438S041000, C438S226000, C438S341000, C438S369000, C257SE21182, C257SE21132, C257SE21133, C257SE21102, C257SE21662

Reexamination Certificate

active

07972971

ABSTRACT:
The disclosure relates to a method for producing a microelectronic device including a plurality of Si1-yGeybased semi-conducting zones (where 0<y≦1) which have different respective Germanium contents, comprising the steps of:a) formation on a substrate covered with a plurality of Si1-yGeybased semi-conducting zones (where 0<x<1 and x<y) and identical compositions, of at least one mask comprising a set of masking blocks, wherein the masking blocks respectively cover at least one semi-conducting zone of the said plurality of semi-conducting zones, wherein several of said masking blocks have different thicknesses and/or are based on different materials,b) oxidation of the semi-conducting zones of the said plurality of semi-conducting zones through said mask.

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