Method for producing semiconductor wafers with low light scatter

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from liquid combined with subsequent diverse...

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117 13, 117 34, 148DIG3, 148DIG24, 148DIG127, 438 14, 438795, H01L 21324

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056292163

ABSTRACT:
A monitor wafer used to determine the cleanliness of a wafer fabrication environment requires a surface having a minimum of light scattering anomalies so that contamination deposited by the environment is not confused with light scattering anomalies initially on the monitor wafers. In the present invention, ingots of a single-crystal semiconductor are grown at a reduced pull rate and wafers produced from the ingot are annealed within a preferred temperature range that varies with the pull rate to produce wafers having reduced light-scattering anomalies on their surfaces. The number of light-scattering anomalies increases at a slower rate upon repetitive cleaning cycles than does the number of light-scattering anomalies of prior art wafers.

REFERENCES:
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W. Wijaranakula, "Dissolution kinetics of D defects in Czochralski silicon," Journal of Applied Physics, vol. 75, No. 7, Apr. 1994, pp. 3678-3680.
Ryuta, Jiro, et al., JPN. J. Appl. Phys. vol. 31 (1992) pp. L293-L295.
Ryuta, Jiro, et al., JPN. J. Appl. Phys. vol. 29 (1990) pp. L1947-1949.
E. Biedermann, et al., IBM Tech. Discl. Bulletin 19, 4 (1976)1295. "Producing Si . . . with . . . Surface . . . Free from Defects".

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