Method for producing semiconductor substrate

Details Method for producing semiconductor substrate Method for producing semiconductor substrate

2007-05-09

2010-12-14

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S458000, C438S514000, C257SE21122

Reexamination Certificate

active

07851337

ABSTRACT:
There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.

REFERENCES:
patent: 5953622 (1999-09-01), Lee et al.
patent: 6344404 (2002-02-01), Cheung et al.
patent: 2006/0063353 (2006-03-01), Akatsu
patent: 1227964 (1999-09-01), None
patent: 2005093807 (2005-10-01), None
Chinese Office Action dated Jun. 27, 2008 (with English Translation).

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