Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1990-09-04
1991-11-19
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
148 33, 156636, 156643, 156645, 156657, 156662, 437225, H01L 21306, B44C 122
Patent
active
050663593
ABSTRACT:
A high density of bulk defects suitable for gettering fast diffusing impurities is provided in heavily doped N-type semiconductor (e.g., Si) wafers by forming a surface damage layer of predetermined thickness (e.g., by lapping and etching), then heating first to a temperature to facilitate precipitate nucleation (e.g., SiO.sub.x) and second to a higher temperature to facilitate nuclei growth, and thereafter etching away the remaining surface damage. The correct amount of surface damage, accelerates the formation of bulk precipitate complexes for pinning heavy metals, beyond what would be obtained for the same temperature and time without the surface damage, and without inducing undesirable crystal defects.
REFERENCES:
patent: 4257827 (1981-03-01), Schwuttke et al.
patent: 4314595 (1982-02-01), Yamamoto et al.
patent: 4401506 (1983-03-01), Otsuka
patent: 4410395 (1983-10-01), Weaver et al.
patent: 4437922 (1984-03-01), Bischoff et al.
patent: 4548654 (1985-10-01), Tobin
patent: 4597804 (1986-07-01), Imaoka
patent: 4659400 (1987-04-01), Garbis et al.
patent: 4661166 (1987-04-01), Hirao
patent: 4666532 (1987-05-01), Korb et al.
patent: 4837172 (1989-06-01), Mizuno et al.
patent: 4851358 (1989-07-01), Huber
patent: 4868133 (1989-09-01), Huber
patent: 4885257 (1989-12-01), Matsushita
Takano et al., "Annealing Effect of the Chemical Damage on Minute Defects, Heavy Metals and Oxygen Atoms in Silicon Crystal" Electro Chemical Society, vol. 81-5, Semiconductor Silicon 1981.
"Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption" ASTM Designation F121,-83, pp. 191-192.
Bleiler et al., "SIMS Measurements of Oxygen in Heavily-Doped Silicon" Mat. Res. Soc. Sym. Proc., vol. 59 (1986) p. 73.
Yang et al., "On the Interaction of Intrinsic and Extrinsic Gettering Schemes in Silicon" Mat. Res. Symp. Proc. vol. 36, 1985, Materials Research Society.
Tsuya et al., "Behaviors of Thermally Induced Microdefects in Heavily Doped Silicon Wafers" Japanese Journal of Applied Physics, vol. 22, No. 1, Jan. 1983, pp. L16-L18.
Barbee Joe E.
Motorola Inc.
Powell William A.
LandOfFree
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