Method for producing semiconductor device with heat dissipation

Details Method for producing semiconductor device with heat dissipation Method for producing semiconductor device with heat dissipation

1995-05-02

1998-06-23

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438 52, 438462, H01L 213205

Patent

active

057705135

ABSTRACT:
A semiconductor device includes a heat generating element disposed on a front surface of a semiconductor substrate and a cavity disposed within the semiconductor substrate opposite the heat generating element. In this structure, heat generated by the heat generating element is conducted through the substrate to the cavity, whereby the thermal conductivity of the device is improved. In a method for producing the semiconductor device, portions of the substrate at opposite sides of the heat generating element are selectively etched in a direction perpendicular to the front surface to form first holes (first etching process). Thereafter, the substrate is selectively etched from the front surface to form second holes beneath the respective first holes (second etching process). During the second etching process, the second holes are connected to each other, resulting in the cavity for heat radiation.

REFERENCES:
patent: 3969745 (1976-07-01), Blocker, III
patent: 4235506 (1980-11-01), Saito et al.
patent: 5236854 (1993-08-01), Higaki
patent: 5260169 (1993-11-01), Nakano
patent: 5338967 (1994-08-01), Kosaki
patent: 5412235 (1995-05-01), Nakajima et al.
patent: 5426070 (1995-06-01), Shaw et al.

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