Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Patent
1996-03-29
2000-12-12
Bowers, Charles
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
438796, 438799, 392416, 392418, 219405, 118 501, 118641, H01L 2126, H01L 21324, H01L 21477
Patent
active
061598739
ABSTRACT:
In a RTP (rapid Thermal Processing) of a large-diameter semiconductor wafer using a hot-wall type heating furnace, the temperature distribution of the wafer surface is made uniform by means of preliminarily heating a thermal storage plate(s) to a heat-treating temperature, and, then positioning the wafer between a pair of the thermal storage plates or in the direct proximity of a thermal storage plate. The wafer may be brought into contact with the thermal storage plate. The wafer is thus heated rapidly heated to the heat treating temperature.
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European Patent Office Communication with European Search Report for European Application No. 96105158.8 dated Sep. 6, 1996.
Bowers Charles
F.T.L. Co., Ltd.
Kielin Erik J.
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