Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-01-11
2005-01-11
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S634000
Reexamination Certificate
active
06841467
ABSTRACT:
A method for producing a semiconductor device comprises forming an opening by etching process using a resist pattern as a mask in a multi-layered film having a first organic insulating film, a first etching stop film and a second organic insulating film being layered in this order such that the opening penetrates from the first organic insulating film to the second organic insulating film, wherein a second etching stop film is formed between the resist pattern and the second organic insulating film to protect the second organic insulating film from being etched during the formation of the opening.
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Fourson George
Kebede Brook
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
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