Method for producing semiconductor device

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate

Reexamination Certificate

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Reexamination Certificate

active

07871905

ABSTRACT:
A method for producing a device includes embedding trenches with an epitaxial layer having high crystallinity while a mask oxide film remains unremoved. An n-type semiconductor is formed on the surface of a silicon substrate, and a mask oxide film and a mask nitride film are formed on the surface of the n-type semiconductor. The mask laminated film is opened by photolithography and etching, and trenches are formed in the silicon substrate. The width of the remaining mask laminated film is narrowed, whereby portions of the n-type semiconductor close to the opening ends of the trenches are exposed. The trenches are embedded with a p-type semiconductor, whereby the surface of the mask laminated film is prevented from being covered with the p-type semiconductor. The p-type semiconductor is grown from the second exposed portions of the n-type semiconductor. V-shaped grooves are prevented from forming on the surface of the p-type semiconductor.

REFERENCES:
patent: 2001/0049182 (2001-12-01), Urakami et al.
patent: 2005/0221547 (2005-10-01), Yamauchi et al.
patent: 2002-124474 (2002-04-01), None
patent: 2005-317905 (2005-11-01), None
patent: 2006-019610 (2006-01-01), None

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