Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1998-04-07
1999-11-30
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438166, 438487, H01L 2100, H01L 2120
Patent
active
059941723
ABSTRACT:
A metal element density is lowered in a crystalline silicon film obtained by four hour treatment at about 550.degree. C. by using a catalyst metal which accelerates crystallization. At the same time, a crystalline silicon film can be obtained which has a high crystallinity. For this purpose, extremely oxide film 13 is formed on an amorphous silicon film formed on this glass substrate in the beginning. An aqueous solution of acetate added with 10 to 200 ppm (need adjustment) of catalyst element like nickel or the like is dripped. This state is held for a predetermined time. Then the spin drying is performed by using a spinner. The film is crystallized by four hour treatment at 550.degree. C. Then a localized nickel component is removed by the fluoric acid treatment. Further, the crystalline silicon film is obtained by laser light irradiation. Then a crystalline silicon film is obtained having a low density of metal element and a small defect density by four hour heat treatment at 550.degree. C.
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Fukunaga Takeshi
Miyanaga Akiharu
Ohtani Hisashi
Costellia Jeffrey L.
Ferguson Jr. Gerald J.
Lebentritt Michael S.
Niebling John F.
Semiconductor Energy Laboratory., Ltd.
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