Method for producing semiconductor device

Details Method for producing semiconductor device Method for producing semiconductor device

1996-08-07

1999-01-12

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438487, H01L 2100, H01L 2120

Patent

active

058588221

ABSTRACT:
In irradiating and scanning an amorphous silicon film formed on the glass substrate with a linear laser beam, the glass substrate is placed so as to assume a convex surface. In a heated state, the amorphous silicon film is irradiated and scanned with the linear laser beam having an inverted-U-shaped focus line that approximately coincides with the convex surface. Slow cooling is thereafter performed. A silicon film having uniform crystallinity is formed on a glass substrate having flat surface. Also, A thin film transistor (TFT) having a uniform threshold voltage is produced by using the crystalline silicon film.

REFERENCES:
patent: 5346850 (1994-09-01), Kaschmitter
patent: 5382548 (1995-01-01), Lee
patent: 5561081 (1996-10-01), Takenouchi

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