Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1996-11-05
1999-10-05
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 64, 257 57, 257255, 257627, 438 83, H01L 29786, H01L 2904
Patent
active
059628715
ABSTRACT:
A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where nickel serving as a crystallization-promoting catalyst is introduced.
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Takayama Toru
Takemura Yasuhiko
Zhang Hongyong
Costellia Jeffrey L.
Ferguson Jr. Gerald J.
Jackson, Jr. Jerome
Semiconductor Energy Laboratory Co,. Ltd.
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