Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1989-03-09
1991-01-08
Straub, Gary P.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156610, 156612, 156613, 156DIG72, 156DIG97, C30G 108, C30G 110, C30G 2302, C30G 2948
Patent
active
049832492
ABSTRACT:
A n-type ZnSe thin layer is prepared by heating a ZnSe signal crystal substrate in a hydrogen atmosphere under a pressure of from 0.1 Torr. to 10 Torr. at a temperature of from 250.degree. C. to 450.degree. C. while supplying a gaseous organozinc compound, H.sub.2 Se gas and a gaseous organoaluminum compound in such amounts that a molar ratio of Se/Zn is from 10 to 100 and a molar ratio of Al/Zn is from 0.02 to 0.07 to grow the aluminum-doped ZnSe thin film on the ZnSe single crystal substrate.
REFERENCES:
patent: 4422888 (1983-12-01), Stutius
patent: 4584053 (1986-04-01), Namba et al.
patent: 4632711 (1986-12-01), Fujita et al.
patent: 4866007 (1989-09-01), Taguchi et al.
Chemical Abstracts, G. Dervyatykh et al. "Properties of Epitaxial Layers of Zinc Selenide Precipitated from Diethylzinc and Hydrogen Selenide", Apr. 30, 1984, p. 550.
Journal of Crystal Growth, T. Yodo et al., "Growth of High-Quality ZnSe by MOVPE on (100) ZnSe Substrate", Jan. 1, 1988, p. 274.
Japanese Journal of Applied Physics, A. Yoshikawa et al., "Effects of (H2Se)/(DMZn) Molar Ratio on Epitaxial ZnSe Films Grown by Low-Pressure MOCVD", Oct. 1984, pp. L773-L775.
Nanba Hirokuni
Taguchi Tsunemasa
Production Engineering Association
Straub Gary P.
Sumitomo Electric Industries Ltd.
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