Method for producing semi-conditioning material wafers by...

Details Method for producing semi-conditioning material wafers by... Method for producing semi-conditioning material wafers by...

2008-06-24

2009-10-13

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C257SE21133

Reexamination Certificate

active

07601618

ABSTRACT:
Wafers of semi-conducting material are formed by moulding and directional crystallization from a liquid mass of this material. A seed, situated at the bottom of the crucible, presents an orientation along non-dense crystallographic planes. The mould is filled with the molten semi-conducting material by means of a piston or by creation of a pressure difference in the device. The mould is preferably coated with a non-wettable anti-adhesive deposit.

REFERENCES:
patent: 6774009 (2004-08-01), Johnson et al.
patent: 7547360 (2009-06-01), Gupta et al.
patent: 2007/0169684 (2007-07-01), Stoddard
patent: 0 115 711 (1984-08-01), None
patent: 1 329 538 (2003-07-01), None
patent: B2-2947529 (1999-09-01), None
Hide et al.“Mould Shaping Silicon Crystal Growth with A Mould Coating Material by the Spinning Method.”Journal of Crystal Growth 79(1986) pp. 583-589.
Saito et al. “A New Directional Solidification Technique for Polycrystalline Solar Grade Silicon.”IEEE(1981) pp. 576-580.

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