Method for producing patterned thin films

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S478000, C438S481000, C438S257000

Reexamination Certificate

active

07468328

ABSTRACT:
The present invention relates to methods for producing a patterned thin film on a substrate. The method comprises the spatially and possibly also temporally modulation of nucleation modes of film growth during the growth of patterned thin films. The nucleation modes are modulated between no or substantially no nucleation, 2D nucleation, and 3D nucleation. The modulation is obtained by adjusting the surface treatment spatially applied over regions of the substrate, the growth conditions for the thin film materials used, and/or the specific thin film materials used. The growth conditions typically comprise the substrate temperature and the deposition flux. The modulation allows for spatially varying the interaction between the substrate material and the thin film materials deposited.

REFERENCES:
patent: 5364815 (1994-11-01), Osada
patent: 5677226 (1997-10-01), Ishitani
patent: 5915194 (1999-06-01), Powell et al.
patent: 6273949 (2001-08-01), Eyres et al.
patent: 6620710 (2003-09-01), Kamins
patent: 7118929 (2006-10-01), Frayssinet et al.
patent: 2003/0089899 (2003-05-01), Lieber et al.
patent: 2004/0144301 (2004-07-01), Neudeck et al.
Timothy Trentler, et al.,Solution-Liquid-Solid Growth of Crystalline III-V Semiconductors; An Analogy to Vapor-Liquid-Solid Growth, Science, vol. 270, pp. 1791-1794, Dec. 15, 1995.
M. G. Kane, et al., Analog and Digital Circuits Using Organic Thin-Film Transistors on Polyester Substrates, IEEE Electron Device Letters, vol. 21, No. 11, pp. 534-536, Nov. 2000.
Nir Tessler,Lasers Based on Semiconducting Organic Materials, Advanced Materials, vol. 11, No. 5, pp. 363-370, 1999.
Zhenan Bao, et al.,Printable organic and polymeric, semiconducting materials and devices, Journal of Materials, Chemistry, 9, pp. 1895-1904, Jun. 14, 1999.
V.G. Kozlov, et al.,Laser action in organic semiconductor waveguide and double-heterostructure devices, Nature, vol. 389, pp. 362-364, Sep. 25, 1997.
Hagen Klauk, et al.,Fast Organic Thin-Film Transistor Circuits, IEEE Electron Device Letters, Vo. 20, No. 6, pp. 289-291, Jun. 1999.
I. H. Wilson et al., “The expitaxial growth of compound semiconductors observed by atomic force microscopy”, Inst. Phys. Conf. Ser. No. 146, paper presented at Microscopy of Semiconducting Materials Conference, Oxford (Mar. 20-23, 1995).
K. Kushida et al., “Initial stage of Ag growth on Ge(001)surfaces at room temperature”, Surface Science Elsevier Netherlands, vol. 442 No. 2, pp. 300-306 (Sep. 1999).
R. Ruiz et al.,Pentacene ultrathin film formation on reduced and oxidized Si surfaces, Physical Review B, vol. 67 No. 12, pp. 125406-1-7 (Mar. 12, 2003).
Yi Luo et al., “Fractal-compact island transition and self-limiting growth of pentacene on polymers”, Abstract, Institution of Electrical Engineers, vol. 537 No. 1-3, pp. 241-246 (Jul. 1, 2003).
S. Verlaak et al., “Nucleation of organic semiconductors on inert substrates”, Abstract, Institution of Electrical Engineers, vol. 68 No. 19, pp. 195409-1-11 (Nov. 15, 2003).
European Search Report for EP 04 01 5799, application of Interuniversitair Micro-Elektronica Centrum, dated Jan. 18, 2005.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for producing patterned thin films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing patterned thin films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing patterned thin films will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4035739

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.