Method for producing partial SOI structures comprising zones...

Details Method for producing partial SOI structures comprising zones... Method for producing partial SOI structures comprising zones...

2010-03-24

2011-10-25

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S051000, C257S347000, C257SE27112, C438S150000, C438S166000, C438S455000, C428S641000

Reexamination Certificate

active

08044465

ABSTRACT:
The invention relates to a method for producing a semiconductor structure comprising a superficial layer, at least one embedded layer, and a support, which method comprises:a step of forming, on a first support, patterns in a first material,a step of forming a semiconductor layer, between and on said patterns,a step of assembling said semiconductor layer with a second support.

REFERENCES:
patent: 4653858 (1987-03-01), Szydlo et al.
patent: 4710794 (1987-12-01), Koshino et al.
patent: 4956314 (1990-09-01), Tam et al.
patent: 5238865 (1993-08-01), Eguchi
patent: 5466630 (1995-11-01), Lur
patent: 5733813 (1998-03-01), Chen et al.
patent: 5972758 (1999-10-01), Liang
patent: 6060344 (2000-05-01), Matsui et al.
patent: 6124185 (2000-09-01), Doyle
patent: 6171923 (2001-01-01), Chi et al.
patent: 6191007 (2001-02-01), Matsui et al.
patent: 6235607 (2001-05-01), Ibok
patent: 6245636 (2001-06-01), Maszara
patent: 6372657 (2002-04-01), Hineman et al.
patent: 6417078 (2002-07-01), Dolan
patent: 6531375 (2003-03-01), Giewont et al.
patent: 6727186 (2004-04-01), Skotnicki et al.
patent: 6955971 (2005-10-01), Ghyselen et al.
patent: 7348253 (2008-03-01), Bedell et al.
patent: 7494897 (2009-02-01), Fournel et al.
patent: 2002/0079551 (2002-06-01), Hokozono
patent: 2003/0077885 (2003-04-01), Aspar et al.
patent: 2003/0096506 (2003-05-01), Li et al.
patent: 2004/0048091 (2004-03-01), Sato et al.
patent: 2004/0058511 (2004-03-01), Sakaguchi
patent: 2004/0065931 (2004-04-01), Benzel et al.
patent: 2004/0081805 (2004-04-01), Furihata et al.
patent: 2004/0127061 (2004-07-01), Yu
patent: 2004/0150067 (2004-08-01), Ghyselen et al.
patent: 2004/0180519 (2004-09-01), Schwarzenbach et al.
patent: 2004/0241934 (2004-12-01), Inoue
patent: 2006/0166461 (2006-07-01), Fournel et al.
patent: 2007/0048919 (2007-03-01), Adetutu et al.
patent: 2007/0132022 (2007-06-01), Son et al.
patent: 2007/0202660 (2007-08-01), Moriceau et al.
patent: 2008/0036039 (2008-02-01), Aspar
patent: 0 736 897 (1996-10-01), None
patent: 1 398 829 (2004-03-01), None
patent: 2 847 077 (2004-05-01), None
patent: 2 850 487 (2004-07-01), None
patent: 2 876 220 (2006-04-01), None
patent: WO 01/93325 (2001-12-01), None
patent: WO 2004/019362 (2004-03-01), None
patent: WO 2004/044975 (2004-05-01), None
patent: WO 2004/059711 (2004-07-01), None
patent: WO 2004/059725 (2004-07-01), None
A.J. Auberton-Herve', et. al. “Why Can Smart Cut Change the Future of Microelectronics?”, International Journal of High Speed Electronics and Systems, vol. 10, No. 1, 2000, pp. 131-146.
J. Steigerwald, et al., “CMP of Other Materials and New CMP Applications”, Chemical Mechanical Planarization of Microelectronic Materials, Chapter 8, pp. 269-277, John Wiley & Sons, New York, 1997.
Q.Y. Tong, et al., “Semiconductor Wafer Bonding, Science and Technology”, The Electrochemical Society Series, 1999, 159 Pages.
C. H. Yun, et al., “SOI on Buried Cavity Patterns Using Ion-Cut Layer Transfer,” Proceedings 1998 IEEE International SOI Conference, Oct. 1998, pp. 165-166.

Affiliated with

Also associated with

Rating

Method for producing partial SOI structures comprising zones... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing partial SOI structures comprising zones..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing partial SOI structures comprising zones... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4275178