Semiconductor device manufacturing: process – Making regenerative-type switching device – Having field effect structure
Reexamination Certificate
2007-05-08
2009-12-29
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making regenerative-type switching device
Having field effect structure
C438S157000, C257S336000, C257SE21437, C257SE21389, C257SE29261
Reexamination Certificate
active
07638370
ABSTRACT:
In a method for producing an electronic component, a first doped connection region and a second doped connection region are formed on or above a substrate; a body region is formed between the first doped connection region and the second doped connection region; at least two gate regions separate from one another are formed on or above the body region; at least one partial region of the body region is doped by means of introducing dopant atoms, wherein the dopant atoms are introduced into the at least one partial region of the body region through at least one intermediate region formed between the at least two separate gate regions.
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Gossner Harald
Knoblinger Gerhard
Russ Christian
Schulz Thomas
Brinks Hofer Gilson & Lione
Infineon - Technologies AG
Smith Matthew
Swanson Walter H
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