Method for producing metal silicide-silicon heterostructures

Details Method for producing metal silicide-silicon heterostructures Method for producing metal silicide-silicon heterostructures

1982-11-29

1985-11-19

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG100, 156DIG102, 156DIG103, 427 95, C30B 2514

Patent

active

045540454

ABSTRACT:
Described is a method for producing semiconductor heterostructures incorporating a metal layer. The metal layer, typically a metal-silicide, can be produced by, e.g., co-deposition or reaction with the substrate. The resulting silicide is typically epitaxial and of high crystalline perfection.

REFERENCES:
patent: 3927225 (1975-12-01), Cordes et al.
patent: 3929527 (1975-12-01), Chang et al.
patent: 4180596 (1979-12-01), Crowder et al.
Epitaxial Growth of Nickel Silicide NiS.sub.2 on Silicon, Tu et al., Proc. 6th Internl. Vacuum Congr. 1974.

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