Semiconductor device manufacturing: process – Chemical etching – Having liquid and vapor etching steps
Reexamination Certificate
2006-05-09
2006-05-09
Ahmed, Shamin (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Having liquid and vapor etching steps
C438S003000, C438S692000, C438S720000, C438S723000, C438S724000, C438S756000, C438S757000, C216S022000, C216S038000
Reexamination Certificate
active
07041603
ABSTRACT:
There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive effect element; forming a coating film so as to cover the first insulating film; exposing a top face of the magnetoresistive effect element; forming an upper writing line on the magnetoresistive effect element; exposing the first insulating film on a side portion of the magnetoresistive effect element by removing a part or all of the coating film; and forming a yoke structural member so as to cover at least a side portion of the upper writing line and so as to contact the exposed first insulating film on the side portion of the magnetoresistive effect element.
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Amano Minoru
Kishi Tatsuya
Saito Yoshiaki
Ueda Tomomasa
Yoda Hiroaki
Ahmed Shamin
Chen Eric B.
Kabushiki Kaisha Toshiba
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