Method for producing low-k l film, semiconductor device, and...

Details Method for producing low-k l film, semiconductor device, and... Method for producing low-k l film, semiconductor device, and...

2009-11-12

2011-10-04

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S790000

Reexamination Certificate

active

08030221

ABSTRACT:
Hydrophobicity of a low dielectric constant film comprising a porous silica film is improved by applying a raw material for forming a porous silica film onto a substrate, and performing vapor-phase transport treatment to expose the substrate to an atmosphere of organic amine vapor to which no water is added. Simultaneously, reduction in a dielectric constant, reduction in leakage current, and improvement in mechanical strength are attained by controlling a pore diameter in a predetermined range.

REFERENCES:
patent: 7585789 (2009-09-01), Hyodo et al.
patent: 2004-079592 (2004-03-01), None
patent: 2004-311532 (2004-11-01), None
patent: 2005-210111 (2005-08-01), None
patent: 2007-149954 (2007-06-01), None
patent: 10-2008-0022316 (2008-03-01), None
Cho, Y. et al. (2008), “Pure Silica Zeolite Films Prepared by a Vapor Phase Transport Method,”Japanese Journal of Applied Physics,47(11): 8360-8363.
Korean Office Action mailed on May 16, 2011, directed towards counterpart Korean patent application No. 10-2010-0001656; 11 pages.

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