Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated...
Reexamination Certificate
2007-11-07
2010-06-15
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
C257S632000, C257S758000, C257SE23002
Reexamination Certificate
active
07737525
ABSTRACT:
Methods of preparing a carbon doped oxide (CDO) layers having a low dielectric constant are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to one or multiple carbon-doped oxide precursors having molecules with at least one carbon-carbon triple bond, or carbon-carbon double bond, or a combination of these groups and depositing the carbon doped oxide dielectric layer under conditions in which the resulting dielectric layer has a dielectric constant of not greater than about 2.7.
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Niu et al., “Method
Fu Haiying
Tang Xingyuan
Wu Qingguo
Mandala Victor A
Novellus Systems Inc.
Stowe Scott
Weaver Austin Villeneuve & Sampson LLP
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