Method for producing liquid discharge head

Details Method for producing liquid discharge head Method for producing liquid discharge head

2005-04-05

2005-04-05

Alanko, Anita (Department: 1765)

Etching a substrate: processes

Etching of semiconductor material to produce an article...

C216S027000, C216S062000, C216S087000, C216S099000

Reexamination Certificate

active

06875365

ABSTRACT:
A method for producing a liquid discharge head provided with a discharge port for discharging liquid, a liquid flow path communicating with the discharge port, and a silicon substrate including a discharge energy generating element for generating energy for liquid discharge and a liquid supply aperture for supplying the liquid flow path with the liquid, the method comprising following steps of: forming an anisotropic etching stop layer in a portion wherein the liquid supply apertures is to be formed on the top side of the substrate; forming an insulation layer on the anisotropic etching stop layer; destructing the crystalline structure under the etching stop layer in the liquid supply aperture forming portion utilizing the insulation layer as a mask, forming, on the rear side of the substrate, an etching mask layer having an aperture corresponding to the liquid supply aperture forming portion on the top side, etching the substrate by anisotropic etching from the aperture until the area where the crystalline structure is destructed is exposed; further etching the area where the crystalline structure is destructed from the portion exposed by the anisotropic etching step thereby exposing the anisotropic etching stop layer; and eliminating the exposed anisotropic etching stop layer.

REFERENCES:
patent: 5565084 (1996-10-01), Lee et al.
patent: 6139761 (2000-10-01), Ohkuma
patent: 6143190 (2000-11-01), Yagi et al.
patent: 9-11479 (1997-01-01), None

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