Method for producing insulated gate thin film semiconductor devi

Details Method for producing insulated gate thin film semiconductor devi Method for producing insulated gate thin film semiconductor devi

1996-02-21

1999-09-14

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438164, H01L 2100, H01L 2184

Patent

active

059535970

ABSTRACT:
An amorphous semiconductor film is etched so that a width of a narrowest portion thereof is 100 .mu.m or less, thereby forming island semiconductor regions. By irradiating an intense light such as a laser into the island semiconductor regions, photo-annealing is performed to crystallize it. Then, of end portions (peripheral portions) of the island semiconductor regions, at least a portion used to form a channel of a thin film transistor (TFT), or a portion that a gate electrode crosses is etched, so that a region that the distortion is accumulated is removed. By using such semiconductor regions, a TFT is produced.

REFERENCES:
patent: 4409724 (1983-10-01), Tasch
patent: 5145808 (1992-09-01), Sameshima
patent: 5313076 (1994-05-01), Yamazaki
patent: 5504020 (1996-04-01), Aomori
patent: 5523257 (1996-06-01), Yamazaki
patent: 5580801 (1996-12-01), Maegawa
patent: 5608232 (1997-03-01), Yamazaki
patent: 5712191 (1998-01-01), Nakajima et al.

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