Method for producing hydrogenated silicon oxycarbide films havin

Details Method for producing hydrogenated silicon oxycarbide films havin Method for producing hydrogenated silicon oxycarbide films havin

1998-05-29

2000-12-12

Elms, Richard

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438778, 438758, H01L 2131, H01L 21469

Patent

active

061598712

ABSTRACT:
This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises reacting an methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. The resulting films are useful in the formation of semiconductor devices and have a dielectric constant of 3.6 or less.

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