Method for producing hydrogenated silicon-oxycarbide films

Details Method for producing hydrogenated silicon-oxycarbide films Method for producing hydrogenated silicon-oxycarbide films

2007-03-13

2007-03-13

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S781000, C438S789000, C257SE21170

Reexamination Certificate

active

10543672

ABSTRACT:
A method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises using plasma-assisted polymerization to react a cyclic silane compound containing at least one strained silicon bond to produce the films. The resulting films are useful in the formation of semiconductor devices.

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