Method for producing homoepitaxial diamond thin films

Details Method for producing homoepitaxial diamond thin films Method for producing homoepitaxial diamond thin films

1998-10-21

2000-10-17

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

4272498, H05H 124, C23C 1626

Patent

active

061328162

ABSTRACT:
A method for producing homoepitaxial diamond thin film is provided which includes a step of effecting plasma assisted CVD with the carbon source concentration of a mixed gas of a carbon source and hydrogen set to a first low level for depositing a high-quality homoepitaxial diamond thin film on a substrate at a low film forming rate and a step of thereafter effecting the plasma assisted CVD with said carbon source concentration set to a second level higher than the first level.

REFERENCES:
patent: 5271971 (1993-12-01), Herb et al.
patent: 5308661 (1994-05-01), Feng et al.
patent: 5607723 (1997-03-01), Plano et al.
patent: 5814149 (1998-09-01), Shintani et al.
S. D. Wolter, et al., Applied Physics Letters, vol. 66, No. 21, pp. 2810-2812, "Bias-Enhanced Nucleation of Highly Oriented Diamond on Titanium Carbide (111) Substrates", May 22, 1995.
Jong-Wan Park, et al., Japanese Journal of Applied Physics, vol. 36, No. 3A, pp. 1238-1244, "The Effects of Pretreatment, CH4 Gas Ratio and Bias Potential on the Microstructure of Microwave Plasma Enhanced Chemical Vapor Deposited Diamond Thin Films", Mar. 1997.

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