Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2006-01-03
2006-01-03
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S459000, C438S476000, C438S479000, C438S149000, C438S311000, C438S406000, C438S409000, C438S752000, C438S751000, C438S753000
Reexamination Certificate
active
06982208
ABSTRACT:
A method for forming a strained silicon layer device with improved wafer throughput and low defect density including providing a silicon substrate; epitaxially growing a first silicon layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; epitaxially growing a step-grade SiGe buffer layer over and contacting the first silicon layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; epitaxially growing a SiGe capping layer over and contacting the step-grade SiGe buffer layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; and, epitaxially growing a second silicon layer using at least one deposition precursor selected from the group consisting of disilane and silane.
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Chen Shih-Chang
Lee Kuen-Chyr
Liang Mong-Song
Yao Liang-Gi
Baumeister B. William
Taiwan Semiconductor Manufacturing Co. Ltd.
Tung & Associates
Yevsikov Victor V.
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