Method for producing high-aspect ratio hollow diffused regions i

Details Method for producing high-aspect ratio hollow diffused regions i Method for producing high-aspect ratio hollow diffused regions i

1984-01-03

1986-06-17

Weisstuch, Aaron

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148186, 148179, H01L 21228

Patent

active

045954283

ABSTRACT:
A semiconductor device and a method for its preparation are disclosed, wherein a body of semiconducting material has at least one bore extending completely therethrough, this bore having a substantially constant diameter of less than about 1.5 mils and an average length-to-diameter ratio of at least about 6:1, this bore being defined by a region of the semiconducting material in the recrystallized state having therein throughout the region a substantially constant uniform concentration level of atoms of at least one metal selected from the group consisting of aluminum, indium, gallium, antimony, gold, silver and tin in addition to the initial content of the semiconducting material.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 2890976 (1954-12-01), Lehovec
patent: 3372070 (1968-03-01), Zuk
patent: 3901736 (1975-08-01), Anthony
patent: 4377423 (1983-03-01), Anthony
patent: 4527183 (1985-07-01), Anthony
Anthony, "Forming Electrical Interconnections Through Semiconductor Wafers", J. Appl. Phys. 52(8), 8/81.
Anthony, "Diodes Formed by Laser Drilling and Diffusion", J. Appl. Phys. 53(12), 12/82.
Anthony, "Semiconductor Wafers by Double-Sided Sputtering", IEEE Tran. Comp., Hybrids & Manuf. Tech. CHMT-5, #1, 3/82.
"Effects of Crystal Orientation, Temperature, and Molten Zone Thickness in Temperature-Gradient Zone-Melting" by J. H. Wernick [Journal of Metals, Transactions AIME (Oct. 1957) pp. 1169-1173].

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