Metal treatment – Barrier layer stock material – p-n type
Patent
1986-03-24
1988-01-19
Hearn, Brian E.
Metal treatment
Barrier layer stock material, p-n type
437136, 437143, 437153, 437 14, 357 20, 357 30, H01L 2906
Patent
active
047203080
ABSTRACT:
A semiconductor device and a method for its preparation are disclosed, wherein a body of semiconducting material has at least one bore extending completely therethrough, this bore having a substantially constant diameter of less than about 1.5 mils and an average length-to-diameter ratio of at least about 6:1, this bore being defined by a region of the semiconducting material in the recrystallized state having therein throughout the region a substantially constant uniform concentration level of atoms of at least one metal selected from the group consisting of aluminum, indium, gallium, antimony, gold, silver and tin in addition to the initial content of the semiconducting material.
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Anthony, "Diodes Formed by Laser Drilling and Diffusion", J. Appl. Phys., 83(12), 12/82, pp. 9154-9164.
Joy et al, "Isolated Power Feed-Thru Holes", I.B.M. Tech. Discl. Bulletin, 16(11), 4/74, pp. 3592-3593.
Anthony Thomas R.
Houston Douglas E.
Loughran James A.
Coppa Francis T.
Davis Jr. James C.
General Electric Company
Hearn Brian E.
Magee Jr. James
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