Method for producing gallium arsenide single crystal ribbons

Details Method for producing gallium arsenide single crystal ribbons Method for producing gallium arsenide single crystal ribbons

1981-03-06

1982-06-22

Clements, Gregory N.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617R, 156606, 156DIG70, 156DIG88, 156DIG96, C30B 2504, C30B 2942

Patent

active

043360998

ABSTRACT:
The single crystal growth of GaAs is highly anisotropic under certain conditions. A wafer of GaAs is masked and exposed to the vapor only through a long, narrow slot in the <110> direction. A thin ribbon of single crystal GaAs grows out of the slot at a high rate along the <112> vector and has {111} plane major faces and {110} plane edges. This ribbon is flexible. A H.sub.2 -AsCl.sub.3 -Ga epitaxy system is modified to permit retraction of the ribbon as it grows and thus the production of long ribbons.

REFERENCES:
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patent: 3386866 (1968-06-01), Ebert et al.
patent: 3425879 (1969-02-01), Shaw et al.
patent: 3471324 (1969-10-01), Wilson et al.
patent: 3758387 (1973-09-01), Zwicker et al.
patent: 3884733 (1975-05-01), Bean
Ito et al, "Morphological Studies of GaAs", published in J. of Crystal Growth, vol. 13, #14, pp. 336-341, Mar. 1972.
Tausch, Jr. et al, "A Novel Crystal Growth", published in J. of Electrochemical Soc., vol. 112, #7, Jul. 1965, pp. 706-709.
Tantraporn, "Flexible GaAs Ribbons", published in Applied Phys. Lett. #35 (6), Sep. 1979, pp. 449-451.
DiLorenzo, "Vapor Growth of Epitaxial GaAs", published in J. of Crystal Growth, vol. 17, Jul. 1972, pp. 189-206.

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