Method for producing fine structure for electronic device

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156652, 156655, 1566591, 156662, 437126, 437234, H01L 21306, B44C 122

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053726758

ABSTRACT:
In a method for producing a fine semiconductor structure, a first layer is formed on a second layer, an etching-resistant mask is formed on the first layer, the second layer is etched in an etchant to form a desired shape thereof, a composition of the first layer is different from a composition of the second layer, and at least one of boundary surfaces of the etching-resistant mask and the first layer facing to each other is substantially prevented from including another substance which is different from both of the etching-resistant mask and the first layer.

REFERENCES:
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patent: 5236864 (1993-08-01), Iga et al.
patent: 5266518 (1993-11-01), Binsma et al.
C. Juang, et al, "Selective etching of GaAs and Al.sub.0.30 Ga.sub.0.70 As with citric acid/hydrogen peroxide solutions", J. Vac. Sci. Technol. B8(5), Sep./Oct. 1990, pp. 1122-1124.
M. Notomi, et al, "Clear energy level shift in ultranarrow In GaAs/InP quantum well wires fabricated by reverse mesa chemical etching", Appl. Phys. Lett. 58(7), Feb. 18, 1991, pp. 720-722.
T. Katoh, et al, "Fabrication of ultrafine gratings on GaAs by electron beam lithography and two-step wet chemical etching", Appl. Phys. Lett. 57(12), Sep. 17, 1990, pp. 1212-1214.

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