Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-12-22
2010-06-01
Malsawma, Lex (Department: 2892)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C423S593100
Reexamination Certificate
active
07727909
ABSTRACT:
A method for producing complex metal oxide having nano-sized grains that includes the steps of forming a mixture containing at least one metal cation dissolved in a solution and particulate material containing at least one further metal in the form of metal(s) or metal compound(s) and treating the mixture to form the complex metal oxide having nano-sized grains. The at least one further metal from the particulate material becomes incorporated into the complex metal oxide.
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Alarco Jose Antonio
Edwards Geoffrey Alan
Talbot Peter Cade
Malsawma Lex
Very Small Particle Company Limited
Winston & Strawn LLP
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