Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2007-12-04
2007-12-04
Tran, Long K. (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S381000, C438S400000, C029S025030, C029S623500, C361S502000, C361S503000, C429S188000, C429S316000
Reexamination Certificate
active
11436043
ABSTRACT:
A method is provided for optimizing the physical characteristics of a coating solution for an undercoat layer formed between a polarizable electrode layer and surface-roughened collector. A first step is carried out to form an undercoat layer on a collector whose surface has been roughened, and a second step is carried out to form a polarizable electrode layer on the undercoat layer. The first step is performed by coating the collector with a coating solution for the undercoat layer that includes electroconductive particles, a binder, and a solvent; the viscosity of the coating solution for the undercoat layer is set to from 0.15 to 0.75 Pa·s, and the weight ratio (P/B) of the electroconductive particles (P) and binder (B) is set to from 20/80 to 40/60. The coating area of the undercoat layer can thereby be adjusted with high precision, and the resistance of the undercoat layer can be reduced.
REFERENCES:
patent: 6426865 (2002-07-01), Kasahara et al.
patent: 2005/0122664 (2005-06-01), Takahashi et al.
patent: 2006/0133005 (2006-06-01), Miyaki et al.
patent: 2003-133719 (2003-09-01), None
patent: 2004-047522 (2004-12-01), None
Emoto Kazutoshi
Hinoki Kiyonori
Ichiki Tsuyoshi
Iwaida Manabu
Murakami Ken-ichi
TDK Corporation and Honda Motor Co., Ltd.
Tran Long K.
Young Law Firm P.C.
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